Jump to content

Google researchers hack PCs using DRAM electrical leaks


Lurker

Recommended Posts

Google researchers have written the first-ever attack code that takes advantage of electrical interference between densely packed memory cells, a unique style of attack that could require changes in chip design.

The work builds on a paper published last year by Carnegie Mellon University and Intel, which found it was possible to change binary values in stored memory by repeatedly accessing nearby memory cells, a process called “bit flipping.”

DRAM memory is vulnerable to such electrical interference because the cells are so closely packed together, a result of engineers increasing a chip’s memory capacity.

Chipmakers have known about electrical interference, but may have viewed it as a reliability issue rather than a security problem, wrote Mark Seaborn, a Google software engineer. Google’s work shows bit flipping can have a much larger impact.

They tested 29 x86-based laptops manufactured between 2010 and last year and found some vulnerable. All of the laptops, which were not identified by make and model, used DDR3 DRAM.

 

source :

http://www.pcworld.com/article/2896032/google-researchers-hack-computers-using-dram-electrical-leaks.html
  • Like 2
Link to comment
Share on other sites

Join the conversation

You can post now and register later. If you have an account, sign in now to post with your account.

Guest
Reply to this topic...

×   Pasted as rich text.   Paste as plain text instead

  Only 75 emoji are allowed.

×   Your link has been automatically embedded.   Display as a link instead

×   Your previous content has been restored.   Clear editor

×   You cannot paste images directly. Upload or insert images from URL.

×
×
  • Create New...

Important Information

By using this site, you agree to our Terms of Use.

Disable-Adblock.png

 

If you enjoy our contents, support us by Disable ads Blocker or add GIS-area to your ads blocker whitelist